X-ray absorption spectroscopy in the analysis of GaN thin films

Surface and Interface Analysis

Volumn 35, Issue 9, 2003, Pages 719-722

  Metson, J B ^a   Trodahl, H J ^b   Ruck, B J ^b   Lanke, U D ^b   Bittar, A ^c  

^a UNIVERSITY OF AUCKLAND   (New Zealand)

^b VICTORIA UNIVERSITY OF WELLINGTON   (New Zealand)

^c CALLAGHAN INNOVATION   (New Zealand)

Author keywords

GaN; Ion assisted deposition; XANES; XPS

Indexed keywords

AMORPHOUS FILMS; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ION BEAM ASSISTED DEPOSITION; STOICHIOMETRY; SURFACE CHEMISTRY; THIN FILMS; X RAY SPECTROSCOPY;

DUPLEX-TYPE STRUCTURE;

GALLIUM NITRIDE;

EID: 0141993570     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1563     Document Type: Conference Paper

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