Comment on "Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces" [J. Appl. Phys. 91, 732 (2002)]

Journal of Applied Physics

Volumn 93, Issue 6, 2003, Pages 3677-3678

  Bermudez, V M ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CLEANING; FERMI LEVEL; PALLADIUM; SCHOTTKY BARRIER DIODES; SURFACE CLEANING;

BAND-GAP;

GALLIUM NITRIDE;

EID: 0037445141     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1542925     Document Type: Review

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