Reactive ion beam etching of in-containing compound semiconductors in an inductively coupled Cl2/Ar plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 38-43

  Lee, J W ^a   Shui, R J ^b   Vawter, G A ^b   Abernathy, C R ^c   Pearton, S J ^c   Hahn, Y B ^d  

^a Inje University   (South Korea)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c University of Florida   (United States)

^d Chonbuk National University   (South Korea)

Author keywords

Compound semiconductors; Etching; InP; RIBE; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; INDUCTIVELY COUPLED PLASMA; ION BEAMS; MASS SPECTROMETRY; MORPHOLOGY; PLASMA DENSITY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SUBSTRATES; SURFACES; THERMAL EFFECTS;

ION ENERGY; ION-ASSISTED MECHANISM; ION-NEUTRAL SYNERGISM; REACTIVE ION BEAM ETCHING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037667825     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.38     Document Type: Article

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