InGaAsP/InP 1.55-μm lasers with chemically assisted ion beam-etched facets

Optical and Quantum Electronics

Volumn 28, Issue 5, 1996, Pages 527-532

  Daleiden, J ^a   Eisele, K ^a   Keller, R ^a   Vollrath, G ^b   Fiedler, F ^b   Ralston, J D ^c  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b Deutche Telekom   (Germany)

^c SDL INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; ION BEAM LITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICALLY ASSISTED ION BEAM ETCHING; HIGH QUALITY LASER FACETS;

SEMICONDUCTOR LASERS;

EID: 0030145998     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00943621     Document Type: Article

References (11)

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