Development of Si(100) surface roughness at the initial stage of etching in F2 and XeF2 gases: Ellipsometric study

Surface Science

Volumn 442, Issue 2, 1999, Pages 206-214

  Aliev, V S ^a   Kruchinin, V N ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; ELLIPSOMETRY; ETCHING; FLUORINE; GAS ADSORPTION; PHASE INTERFACES; SINGLE CRYSTALS; SURFACE ROUGHNESS;

LOW INDEX SINGLE CRYSTALS;

SILICON;

EID: 0033349971     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00917-6     Document Type: Article

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