In situ monitoring of formation of InAs quantum dots and overgrowth by GaAs or AlAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1221-1225

  Yakimov, Michael ^a   Tokranov, Vadim ^a   Agnello, Gabriel ^a   Van Eisden, Jobert ^a   Oktyabrsky, Serge ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS CAPPING LAYERS; INAS QUANTUM DOTS;

AUGER ELECTRON SPECTROSCOPY; DIFFUSION; EVAPORATION; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 31144461394     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1881634     Document Type: Conference Paper

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