Morphology of InAs self-organized islands on AlAs surfaces

Applied Physics Letters

Volumn 75, Issue 3, 1999, Pages 337-339

  Ballet, P ^a   Smathers, J B ^a   Salamo, G J ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; WETTING;

SELF-ORGANIZED ISLANDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032620857     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124368     Document Type: Article

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