Growth temperature dependence of InAs islands grown on GaAs (001) substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1022-1025

  Suekane, Osamu ^a   Hasegawa, Shigehiko ^a   Okui, Toshiko ^a   Takata, Masahiro ^a   Nakashima, Hisao ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

GaAs; InAs; Island; Molecular beam epitaxy; Scanning tunneling microscopy; Wetting layer

Indexed keywords

MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; THERMAL EFFECTS;

WETTING LAYERS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0036478761     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1022     Document Type: Conference Paper

References (16)