Nanoengineered InAs quantum dot active medium for laser diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5365, Issue , 2004, Pages 72-79

  Tokranov, V ^a   Yakimov, M ^a   Katsnelson, A ^a   Lamberti, M ^a   Angello, G ^a   Oktyabrsky, S ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Characteristic temperature; Electroluminescence; Laser diode; Photoluminescence; Quantum dots; Short period superlattice; Transmission electron microscopy

Indexed keywords

CHARACTERISTIC TEMPERATURE; SHORT-PERIOD SUPERLATTICES; TEMPERATURE STABILITY; THRESHOLD CURRENT DENSITY;

CURRENT DENSITY; ELECTROLUMINESCENCE; NANOTECHNOLOGY; OPTIMIZATION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

QUANTUM WELL LASERS;

EID: 3543111398     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.529717     Document Type: Conference Paper

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