Field emission properties and synthesis of carbon nanotubes grown by rf plasma-enhanced chemical vapor deposition

Applied Surface Science

Volumn 252, Issue 8, 2006, Pages 2938-2943

  Jiang, J ^a   Feng, T ^a   Zhang, J H ^a,b   Cheng, X H ^a   Chao, G B ^a   Jiang, B Y ^a   Wang, Y J ^a   Wang, X ^a   Liu, X H ^a   Zou, S C ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Carbon nanotubes; Defects; Growth mechanism; Plasma enhanced chemical vapor deposition

Indexed keywords

CRYSTAL DEFECTS; CURRENT DENSITY; DEFECTS; FIELD EMISSION CATHODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBONACEOUS PARTICLES; COVALENT BONDS; GROWTH MECHANISM; HYDROGEN PLASMA;

CARBON NANOTUBES;

EID: 31144431565     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.04.037     Document Type: Article

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