Highly selective SiO2 etch employing inductively coupled hydro-fluorocarbon plasma chemistry for self aligned contact etch

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 9 A, 1997, Pages 5498-5501

  Iijima, Yukio ^a   Ishikawa, Yoshio ^a   Yang, Chan Lon ^b   Chang, Mei ^b   Okano, Haruo ^a  

^a Applied Materials Japan Inc   (Japan)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Etch; Hydro fluorocarbon; ICP; SAC; Selectivity; Self aligned contact; Silicon nitride; Silicon oxide; VLSI

Indexed keywords

COMPOSITION EFFECTS; ETCHING; FLUOROCARBONS; HYDROGEN BONDS; INTEGRATED CIRCUIT MANUFACTURE; PLASMA APPLICATIONS; SILICA; SILICON NITRIDE;

INDUCTIVELY COUPLED PLASMA; SELF ALIGNED CONTACT ETCH;

VLSI CIRCUITS;

EID: 0031220636     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.5498     Document Type: Article

References (5)

1. J. Marks and C. L. Yang: Ext. Abstr. 183rd Meet. Electrochemical Society, Honolulu, HI, 1993 (Electrochemical Society, Pennington, 1993) Vol. 93-1, p. 369.
2. T. Sakai, J. Abe, K. Horioka and H. Okano: Proc. Symp. Dry Process, 1993, Tokyo, p. 193.
3. K. Kurihara, M. Sekine, K. Horioka and H. Okano: Proc. 16th Symp. Dry Process, 1994, Tokyo, p. 217.
4. Handbook of Chemistry and Physics, ed. D. R. Lide (CRC Press, Boca Raton, 1995).
5. Kagaku Binran (Chemistry Handbook), ed. Chemical Society of Japan (Maruzen, Tokyo, 1984) [in Japanese].