Rashba spin-orbit effect on spin-tunneling time in a ferromagnetic/semiconductorferromagnetic heterojunction with a tunnel barrier

Journal of Applied Physics

Volumn 99, Issue 1, 2006, Pages

  Zhang, Ying Tao ^a,b   Li, You Cheng ^a  

^a HEBEI NORMAL UNIVERSITY   (China)

^b HEBEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC TRANSPORT PROPERTIES; RASHBA SPIN-ORBIT INTERACTION; SEMICONDUCTORFERROMAGNETIC HETEROJUNCTION; SPIN-TUNNELING TIME; TUNNEL BARRIERS;

ELECTRIC CURRENTS; ELECTRON TUNNELING; ELECTRONS; OSCILLATIONS; SEMICONDUCTOR MATERIALS;

FERROMAGNETIC MATERIALS;

EID: 30844435711     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2159080     Document Type: Article

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