Spin-dependent delay time and the Hartman effect in tunneling through diluted-magnetic-semiconductor/semiconductor heterostructures

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 4, 2005, Pages

  Guo, Yong ^a   Shang, Ci En ^a   Chen, Xin Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749233547     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.045356     Document Type: Article

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