Tunneling time of spin-polarized electrons in ferromagnet/insulator (semiconductor) double junctions under an applied electric field

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1318-1323

  Wang, Bin ^a   Guo, Yong ^a   Gu, Bing Lin ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; EXTERNAL ELECTRIC FIELD; FERROMAGNETS; GROUP VELOCITIES; INCIDENT ENERGY; LOWER ENERGIES; QUANTUM SIZE; SPIN ORIENTATIONS; SPIN-DOWN ELECTRONS; SPIN-POLARIZED ELECTRONS; SPIN-UP; STRUCTURAL SIZE; TRANSMISSION COEFFICIENTS; TUNNELING PROPERTIES; TUNNELING TIME; TWO-BAND MODEL;

ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRONS; SPIN POLARIZATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0036470584     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1427140     Document Type: Article

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