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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 291, Issue 6, 2001, Pages 453-458

Spin-tunneling time in a hybrid semimagnetic/semiconductor heterostructure with a single paramagnetic layer

(4) Guo, Yong a,b Wang, Bin a Gu, Bing Lin a Kawazoe, Yoshiyuki b

a TSINGHUA UNIVERSITY (China)

b TOHOKU UNIVERSITY (Japan)

Author keywords

Semimagnetic semiconductor; Spin polarization; Spin separation; Spintronics; Tunneling time

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTORS; PARAMAGNETISM; SPIN POLARIZATION; SPINTRONICS;

ELECTRIC AND MAGNETIC FIELDS; ORDERS OF MAGNITUDE; PARAMAGNETIC LAYERS; SPIN DEPENDENT TUNNELING; SPIN SEPARATION; SPIN-DOWN ELECTRONS; SPIN-UP ELECTRONS; TUNNELING TIME;

HETEROJUNCTIONS;

ACCELERATION; ARTICLE; ELECTRICITY; ELECTRON; MAGNETIC FIELD; MAGNETISM; MATHEMATICAL ANALYSIS; SEMICONDUCTOR;

EID: 0037623644 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/S0375-9601(01)00753-8 Document Type: Article

Times cited : (11)

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