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Volumn 237-240, Issue PART 1, 2005, Pages 518-523

Stress development and relaxation during reaction of a cobalt film with a silicon substrate

Author keywords

Cobalt suicide; Reactive diffusion; Stress; Thin film

Indexed keywords

COMPRESSIVE STRESS; RELAXATION PROCESSES; SILICON; STRESS ANALYSIS; TEMPERATURE DISTRIBUTION; TENSILE STRESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EID: 30744452497     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.237-240.518     Document Type: Conference Paper
Times cited : (9)

References (31)
  • 27
    • 30744454440 scopus 로고    scopus 로고
    • PhD Thesis Univ. Paul Cézanne (Aix Marseille III)
    • C. Rivero, PhD Thesis Univ. Paul Cézanne (Aix Marseille III) 2004.
    • (2004)
    • Rivero, C.1
  • 28
    • 30744453458 scopus 로고    scopus 로고
    • ICDD data base, no38-1449.
    • ICDD Data Base , vol.38 , Issue.1449
  • 29
    • 0000112472 scopus 로고
    • Formation and characterization of transition-metal suicides
    • VLSI Electronics (Academic Press, NY)
    • M. A. Nicolet and S. S. Lau: Formation and Characterization of Transition-Metal Suicides, in VLSI Electronics, Microstructure Science. Vol 6 (Academic Press, NY, 1983), pp. 330-464.
    • (1983) Microstructure Science , vol.6 , pp. 330-464
    • Nicolet, M.A.1    Lau, S.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.