Stress development and relaxation during reactive film formation of Ni 2Si

Journal of Materials Research

Volumn 19, Issue 2, 2004, Pages 676-680

  Liew, K P ^a,c   Bernstein, R A ^b   Thompson, C V ^a,b  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b Massachusetts Institute of Technology   (United States)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; FILM GROWTH; KINETIC THEORY; SILICON WAFERS; STRAIN; STRESS CONCENTRATION; STRESS RELAXATION; THIN FILMS;

REACTIVE FILM FORMATION; STRESS GENERATION;

NICKEL COMPOUNDS;

EID: 1842715094     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2004.0086     Document Type: Article

References (24)

1. N.G. Einspruch, VLSI Electronics: Microstructure Science 6, 355 (1983).
2. A. Steegen and K. Maex, Mater. Sci. Eng. R 38, 1 (2002).
3. C. Tsai and K. Hu, Thin Solids Films 350, 91 (1999).
4. L.J. Chen, S.L. Cheng, H.M. Luo, H.Y. Huang, Y.C. Peng, B.Y. Tsui, C.J. Tsai, and S.S. Guo, The influences of stress on the growth of Ti and Ni suicides on (001)si, 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings 256, 1998.
5. R.B. Marcus and T.T. Sheng, J. Electrochem. Soc. 129, 1278 (1982).
6. D.B. Kao, J.P. McVittie, W.D. Nix, and K.C. Saraswat, IEEE International Electron Devices Meeting Technical Digest p. 388 (1985).
7. P. Sutardja, Modeling of stress effects and in silicon oxidation, Trans. Electron Devices 36, Gainesville, FL 2415 (1989).
8. S. Cea, Ph.D. Thesis, University of Florida (1996).
9. D.X. Xu, S.R. Das, C.J. Peters, and L.E. Erickson, Thin Solid Films 326, 143 (1998).
10. E. Maillard-Schaller, B.I. Boyanov, S. English, and R.J. Nemanich, J. Appl. Phys. 85, 3614 (1999).
11. F.M. d'Heurle and O.Thomas, Defect and Diffusion Forum 129-130, 137 (1996).
12. S.L. Zhang and P.M. d'Heurle, Thin Solid Films 213, 34 (1992).
13. K.P. Liew, R.A. Bernstein, and C.V. Thompson (Unpublished).
14. C. Lavoie, C. Coia, R. Purtell, P. Desjardins, J.L. Jordan-Sweet, C. Cabrai, Jr., P.M. d'Heurle, and J.M.E. Harper, Electrochemical Society Symposium Proceedings 455, 2001 (2002).
15. J.P. Gambino and E.G. Colgan, Mater. Chem. Phys. 52, 99 (1998).
16. W.D. Nix, Metall. Trans. 20A, 2217 (1989).
17. G.G. Stoney, Proc. R. Soc. (London) A82, 172 (1909).
18. C.V. Thompson and R. Carel, J. Mech. Phys. Solids 44, 657 (1996).
19. P. Knauth, A. Charai, and P. Gas, Scr. Metall. Mater. 28, 325 (1993).
20. K.P. Liew, M.S. Thesis, National University of Singapore, Singapore (2003).
21. nd ed. (Cambridge University Press, New York, NY 1992, p. 410).
22. J-C. Ciccariello, S. Poize, and P. Gas, J. Appl. Phys. 67, 3315 (1990).
23. Properties of Metal Silicides, edited by K. Maex and M. van Rossum (Inspec, London, 1995), p. 15.
24. P. Gas, and P.M. d'Heurle, in Silicide Thin Films-Fabrication, Properties, and Applications, edited by R.T. Tung, K. Maex, P.W. Pellegrini, and L.H, Allen (Mater. Res. Soc. Symp. Proc. 402, Pittsburgh, PA 1996) p. 39.