Atomic layer deposition of silicon nitride barrier layer for self-aligned gate stack

Proceedings - Electrochemical Society

Volumn 26, Issue , 2003, Pages 86-92

  Finstad, Casey C ^a   Muscat, Anthony J ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITIONS (ALD); EQUIVALENT OXIDE THICKNESS (EOT); SELF-ALIGNED GATE STACK; SURFACE CHEMICAL PROCESSES;

ACTIVATION ENERGY; AMMONIA; DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; MONOLAYERS; MOS DEVICES; PASSIVATION; PERMITTIVITY; PHASE EQUILIBRIA; SILICA; SILICON NITRIDE; SUBSTRATES; THERMODYNAMIC PROPERTIES; TRANSITION METALS; ULTRAVIOLET RADIATION;

MICROELECTRONICS;

EID: 3042841608     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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