High-quality InGaAs/InP interfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells

Journal of Crystal Growth

Volumn 244, Issue 3-4, 2002, Pages 243-248

  Carta, G ^a   D'Andrea, A ^a   Fernandez Alonso F ^b   El Habra, N ^a   Righini, M ^b   Rossetto, G ^a   Schiumarini, D ^a   Selci, S ^b   Zanella, P ^a  

^a CNR   (Italy)

^b CNR   (Italy)

Author keywords

A1. Carry over; A1. High resolution X ray diffraction; A1. Interfaces; A1. Photoluminescence; A3. Metalorganic vapor phase epitaxy; B1. Tert butylarsine

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION ANALYSIS;

MULTI-QUANTUM WELLS;

INTERFACES (MATERIALS);

EID: 0036785888     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01659-7     Document Type: Article

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