Cross-sectional scanning tunneling microscopy study of interfacial roughness in an InGaAs/InP multiple quantum well structure grown by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 A, 2003, Pages 1548-1551

  Yamakawa, Ichirou ^a   Yamauchi, Takeshi ^b   Oga, Ryo ^a   Fujiwara, Yasufumi ^a   Takeda, Yoshikazu ^a   Nakamura, Arao ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

III V compound semiconductor; Interfacial roughness; Metalorganic and vapor phase epitaxy; Scanning tunneling microscopy; Semiconductor heterostructure

Indexed keywords

ARSENIC; ATOMS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; PHOSPHORUS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE ROUGHNESS;

CROSS SECTIONAL SCANNING TUNNELING MICROSCOPY; MULTIPLE QUANTUM WELL STRUCTURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038269277     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1548     Document Type: Article

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