Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications

Proceedings - Electrochemical Society

Volumn 22, Issue , 2003, Pages 215-220

  Kang, C S ^a   Cho, H J ^a   Kim, Y H ^a   Choi, R ^a   Kang, C Y ^a   Shahriar, A ^a   Choi, C H ^a   Rhee, S J ^a   Lee, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT PENETRATION EFFECTS; GATE ELECTRODES; ULTRATHIN GATE DIELECTRICS; WORK FUNCTION;

ANNEALING; METALLIC FILMS; MOS CAPACITORS; PERMITTIVITY; TANTALUM COMPOUNDS; ULTRATHIN FILMS;

SEMICONDUCTING FILMS;

EID: 3042774332     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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