Reactive sputter deposition and characterization of tantalum nitride thin films

Materials Science and Engineering B

Volumn 57, Issue 3, 1999, Pages 224-227

  Radhakrishnan, K ^a   Geok Ing, Ng ^a   Gopalakrishnan, R ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Auger electron spectroscopy; Resistivity; Tantalum nitride; Temperature coefficient of resistivity; Thin film resistors; X ray diffraction

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNETRON SPUTTERING; NITROGEN; PARTIAL PRESSURE; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTER DEPOSITION; STOICHIOMETRY; SUBSTRATES; TANTALUM COMPOUNDS; THIN FILM DEVICES;

TANTALUM NITRIDE; TEMPERATURE COEFFICIENT OF RESISTIVITY;

SEMICONDUCTING FILMS;

EID: 0039134672     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00417-6     Document Type: Article

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