SiGe HMODFET "KAIST" micropower model and amplifier realization

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 51, Issue 6, 2004, Pages 1100-1105

  Vilches, Antonio ^a   Fobelets, Kristel ^a   Michelakis, Kostis ^a   Despotopoulos, Solon ^a   Papavassiliou, Christos ^a   Hackbarth, Thomas ^b   König, Ulf ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b DAIMLER AG   (Germany)

Author keywords

Micropower; Modeling; MODFET; SiGe

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; REGRESSION ANALYSIS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

MICROPOWER; MODFET;

FIELD EFFECT TRANSISTORS;

EID: 3042695151     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2004.829242     Document Type: Article

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