Optimised n-channel Si/SiGe HFETs design for VTH shift immunity

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2241-2245

  Jeamsaksiri, W ^a   Velazquez J E ^b   Fobelets, K ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

VOLTAGE SHIFT;

FIELD EFFECT TRANSISTORS;

EID: 0036890565     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00228-9     Document Type: Article

References (10)

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