Energetics of native point defects in cubic silicon carbide

European Physical Journal B

Volumn 38, Issue 3, 2004, Pages 437-444

  Bernardini, F ^a   Mattoni, A ^a   Colombo, L ^a  

^a UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); GRAIN GROWTH; POINT DEFECTS; STOICHIOMETRY;

DEFECT CLUSTERS; FORMATION ENERGIES; SUPERCELLS; VALENCE BAND ENERGY;

SILICON CARBIDE;

EID: 3042667632     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1140/epjb/e2004-00137-6     Document Type: Article

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