Characteristics of deep-submicrometer mosfet and its empirical nonlinear rf model

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 5 PART 2, 1998, Pages 611-615

  Chan, Yi Jen ^a   Huang, Chia Hung ^b   Weng, Chung Chian ^a   Liew, Boon Khim ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Empirical rf model; Microwave characteristics; MOSFET

Indexed keywords

GATES (TRANSISTOR); MICROWAVE INTEGRATED CIRCUITS; NONLINEAR NETWORKS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

EMPIRICAL NONLINEAR RADIO FREQUENCY MODELS; SUBMICROMETER GATE LENGTHS;

MOSFET DEVICES;

EID: 0032069807     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.668671     Document Type: Article

References (8)

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