RF circuit performance degradation due to hot carrier effects and soft breakdown

Midwest Symposium on Circuits and Systems

Volumn 1, Issue , 2002, Pages

  Xiao, Enjun ^a   Yuan, J S ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; HOT CARRIERS; SPURIOUS SIGNAL NOISE; VARIABLE FREQUENCY OSCILLATORS;

LOW NOISE AMPLIFIERS (LNA);

MOSFET DEVICES;

EID: 0036976898     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. C. S. Kim, M. Park, C. Kim, Y. C. Hyeon, H. K. Yu, K. Lee and K. S. Nam, "A fully integrated 1.9 GHz low noise amplifier", Vol. 8, August 1998, pp 293-295
2. E. Takeda, C. Y. Yang and A. Miura-Hamada, "Hot carrier effects in MOS devices", Academic Press, New York, 1995
3. BERT Manuals 1999
4. A. Chan et.al, "A 1-V 2.4-GHz CMOS RF receiver front end for Bluetooth application", ISCAS 2001, pp 454-457
5. Enjun Xiao and J.S.Yuan, "Hot carrier and soft breakdown effects on VCO performance", 2002 RFIC Symposium, June, 2002