Soft breakdown and hot carrier reliability of CMOS RF mixer and redesign

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 399-402

  Li, Qiang ^a   Li, Wei ^a   Zhang, Jinlong ^a   Yuan, Jiann S ^a  

^a University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; HOT CARRIERS; MATHEMATICAL MODELS; MOSFET DEVICES; RELIABILITY;

SOFT BREAKDOWN (SBD);

MIXER CIRCUITS;

EID: 0036309467     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. RF circuit performance degradation due to soft breakdown and hot carrier effect in deep submicron CMOS technology
2. Hot carrier reliability considerations for low vdd CMOS technology
3. Ultra-thin gate dielectrics: They break down, but do they fall
4. Soft oxide breakdown on MOS transistor degradation
5. Circuit design guidelines for n-channel MOSFET hot carrier robustness
6. Device reliability in analog CMOS applications
7. On the methodology of assessing hot-carrier reliability of analog circuits
8. A 1.9-GHz wide-band IF double conversion CMOS receiver for cordless telephone applications
9. RF linearity of short-channel MOSFETs