Strain relaxation-induced modifications of the optical properties of self-assembled InAs quantum dot superlattices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1493-1495

  Petitprez, E ^a   Moshegov, N T ^a,c   Marega Jr , E ^a   Mazel, A ^b   Dorignac, D ^b   Fourmeaux, R ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b CEMES CNRS   (France)

^c The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM ARSENIDE; QUANTUM DOT SUPERLATTICES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0034188029     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591411     Document Type: Article

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