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Journal of Crystal Growth

Volumn 241, Issue 1-2, 2002, Pages 63-68

Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots

(7) Lee, H S a Lee, J Y a Kim, T W b Choo, D C b Kim, M D c Seo, S Y a Shin, J H a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Kwangwoon University (South Korea)

c SAMSUNG Electronics (South Korea)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

SELF-ASSEMBLED QUANTUM DOTS (SAQD);

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036565857 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01252-6 Document Type: Article

Times cited : (20)

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