Quantum functional devices for advanced electronics

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 505-511

  Yokoyama, N ^a   Muto, S ^a   Imamura, K ^a   Takatsu, M ^a   Mori, T ^a   Sugiyama, Y ^a   Sakuma, Y ^a   Nakao, H ^a   Adachihara, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COSTS; ENERGY DISSIPATION; GATES (TRANSISTOR); INTEGRATED CIRCUITS; NANOTECHNOLOGY; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSISTORS;

ADVANCED ELECTRONICS; NANOELECTRONICS; QUANTUM FUNCTIONAL DEVICES; QUANTUM MECHANICAL EFFECTS; RESONANT TUNNELING HOT ELECTRON TRANSISTORS;

QUANTUM ELECTRONICS;

EID: 0029714253     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00279-0     Document Type: Article

References (9)

1. N. Yokoyama et al., Jpn. J. Appl. Phys. 24, L853 (1985).
2. T. Mori et al., Proc. Int. Conf. Solid-State Development and Materials, September, p. 1074 (1993).
3. M. Takatsu et al., Paper no. TA 7.2 reported at ISSCC, February (1994).
4. Y. Sakuma et al., 21st Int. Symp. on Compound Semiconductors, San Diego, September (1994).
5. Y. Sugiyama et al., Workshop on Mesoscopic Physics and Electronics, Tokyo, March (1995).
6. Y. Nagamune et al., Phys. Rev. Lett. 69, 2963 (1992).
7. Y. Nagamune et al., Appl. Phys. Lett. 64, 2495 (1994).
8. H. Nakao et al., Proc. 37th Electronic Materials Conf., University of Virginia (1995).
9. K. Imamura et al., Extended Abstracts of the 1994 Int. Conf. on Solid State Devices and Materials, p. 467 (1994).