Gate dielectric breakdown: A focus on ESD protection

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 399-404

  Weir, Bonnie E ^a   Leung, Che Choi ^a   Silverman, Paul J ^a   Alam, Muhammad A ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; ELECTROSTATIC DISCHARGE; OXYNITRIDES;

DIELECTRIC MATERIALS; ELECTROSTATICS; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDES; STATISTICAL METHODS; STRESSES;

ELECTRIC BREAKDOWN;

EID: 3042520512     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)

1. C. Duvvury and A. Amerasekera, Semicond. Sci. Technol., Vol. 11 pg. 833, 1996.
2. B.K. Ridley, Journ. Appl. Phys., Vol. 46 pg. 998, 1975.
3. Y. Chen et al. International Reliability Physics Symposium Proceedings, pg. 87, 1998.
4. B. Wang, J.S. Suehle, E.M. Vogel, J.B. Bernstein, Electron Device Letters, IEEE , Vol. 22 pg.224, 2001.
5. K. P. Cheung, Microelectronics Reliab., Vol. 41, pg. 745, 2001.
6. K. Matsuzawa, H. Satake, C. Sutou, H. Kawashima, SISPAD Proceedings, pg. 129, 2003.
7. J. Wu, P. Juliano, E. Rosenbaum, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, pg. 287, 2000.
8. M. A. Alam, J. Bude, A. Ghetti, International Reliability Physics Symposium Proceedings, pg. 21, 2000.
9. B. E. Weir, P. J. Silverman, M.A. Alam, Y. Ma, Proceedings of the Electrochemical Society, pg. 465, 2002.
10. J. Barth et al. Electrical Overstress/Electrostatic Discharge Symposium Proceedings, pg. 85, 2000.
11. During and after first dielectric breakdown, when the DUT resistance decreases, constant voltage is not maintained.
12. A. Berman, International Reliability Physics Symposium Proceedings, pg. 204, 1981.
13. For the projections for the PFET, which are over 2V rather than IV, we have taken into account the curvature of the voltage acceleration. Similar values can be found in: B. E. Weir et al., Semicond. Sci. Technol. Vol. 15, pg. 455, 2000; J. H. Stathis, International Reliability Physics Symposium Proceedings, pg, 132, 2001; and P. E. Nicollian, W. R. Hunter, and J. C. Hu, International Reliability Physics Symposium Proceedings, pg. 7, 2000.
14. For the projections for the PFET, which are over 2V rather than IV, we have taken into account the curvature of the voltage acceleration. Similar values can be found in: B. E. Weir et al., Semicond. Sci. Technol. Vol. 15, pg. 455, 2000; J. H. Stathis, International Reliability Physics Symposium Proceedings, pg, 132, 2001; and P. E. Nicollian, W. R. Hunter, and J. C. Hu, International Reliability Physics Symposium Proceedings, pg. 7, 2000.
15. For the projections for the PFET, which are over 2V rather than IV, we have taken into account the curvature of the voltage acceleration. Similar values can be found in: B. E. Weir et al., Semicond. Sci. Technol. Vol. 15, pg. 455, 2000; J. H. Stathis, International Reliability Physics Symposium Proceedings, pg, 132, 2001; and P. E. Nicollian, W. R. Hunter, and J. C. Hu, International Reliability Physics Symposium Proceedings, pg. 7, 2000.
16. From our DC measurements, also in agreement with E. Y. Wu et al., Semicond. Sci. Technol. Vol. 15, pg. 425, 2000.
17. (1/β) for the NFET with β=1.2.
18. S. Lombardo, J. H. Stathis, B. P. Linder, Physical Review Letters, Vol. 90, pg. 167601, 2003.
19. M. A. Alam, B. E. Weir, P. J. Silverman, Trans. Elec. Dev. Vol. 49, pg. 232, 2002.
20. N. A. Dumin, K. Liu, S-H. Yang, International Reliability Physics Symposium Proceedings, pg. 73, 200