Impact of pocket implant on MOSFET mismatch for advanced CMOS technology

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2004, Pages 123-126

  Rochereau, K ^a   Difrenza, R ^b   Mc Ginley, J ^c   Noblanc, O ^b   Julien, C ^b   Parihar, S ^c   Llinares, P ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); IMPURITIES; LEAKAGE CURRENTS; POLYSILICON; RANDOM PROCESSES;

DOPANT; GATE OXIDES; POCKET IMPLANT ENERGY; SHORT CHANNEL EFFECTS (SCE);

MOSFET DEVICES;

EID: 3042511476     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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