Influence of doping profile and halo implantation on the threshold voltage mismatch of a 0.13μm CMOS technology

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 579-582

  Croon, J A ^a,b   Augendre, E ^a   Decoutere, S ^a   Sansen, W ^b   Maes, H E ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; NEURAL PROSTHESES;

CURRENT FACTORS; DOPING FLUCTUATIONS; FLUCTUATION MECHANISMS; HALO IMPLANTATION; POISSON STATISTIC; POLYSILICON GATES; RANDOM CHARACTERS; THEORETICAL LIMITS;

THRESHOLD VOLTAGE;

EID: 33847640837     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194997     Document Type: Conference Paper

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