A new model for threshold voltage mismatch based on the random fluctuations of dopant number in the MOS transistor gate

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 299-302

  Difrenza, R ^a,b   Llinares, P ^a   Morin, G ^a   Granger, E ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (Italy)

^b Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT NUMBERS; RANDOM FLUCTUATION;

EID: 84907524559     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195260     Document Type: Conference Paper

References (8)

1. T. Mizuno et al., IEEE Trans. Electron Devices, vol. 41, 1994,pp. 2216-2221.
2. P. A. Stolk et al., IEEE Trans. Electron Devices, vol. 45, 1998, pp. 1960-1971.
3. K. Takeuchi et al., IEDM1997, pp. 841-844.
4. H. P. Tuinhout et al, IEDM1997,pp. 631-634.
5. A. Asenov et al, IEEE Trans. Electron Devices, vol. 47, 2000,pp. 805-812.
6. J. Bastos et al, Analog Integrated Circuits and Signal Processing, 12, 1997, pp. 95-106.
7. R. Difrenza et al., ESSDERC 2000, pp. 584-587.
8. R. Difrenza et al., ICMTS 2001, pp. 7-10.