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Volumn 389-393, Issue , 2002, Pages 1033-1036
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X-ray photoelectron spectroscopy studies of post-oxidation process effects on oxide/SiC interfaces
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Author keywords
Bond; Post oxidation annealing; Re oxidation; SiC MOSFETs; Slope shaped oxide film; X ray photoelectron spectroscopy
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Indexed keywords
BONDING;
OXIDATION;
PHOTOELECTRONS;
PHOTONS;
SILICON CARBIDE;
X RAY PHOTOELECTRON SPECTROSCOPY;
ANNEALING;
CHEMICAL BONDS;
ELECTRIC PROPERTIES;
ETCHING;
MOSFET DEVICES;
BONDING STATE;
INTERFACIAL STRUCTURES;
MOS STRUCTURE;
POST-OXIDATION;
POST-OXIDATION ANNEALING;
RE-OXIDATION;
SIC MOSFETS;
X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;
POST-OXIDATION PROCESSES;
OXIDE FILMS;
INTERFACES (MATERIALS);
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EID: 0036429057
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.1033 Document Type: Conference Paper |
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Times cited : (7)
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References (6)
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