SCOPUS 정보 검색 플랫폼

Volumn 287, Issue 2, 2006, Pages 694-697

Horizontal growth of epitaxial (1 0 0) β-FeSi2 templates by metal-organic chemical vapor deposition

Author keywords

A3. Metal organic chemical vapor deposition; A3. Thin film; B1. FeSi2

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; THIN FILMS;

Β-FESI2; HORIZONTAL GROWTH; OVERGROWTH PROCESS; SIDEWALL PLANES;

EPITAXIAL GROWTH;

EID: 30344483628 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.097 Document Type: Conference Paper

Times cited : (3)

References (15)

1
- 0030616229
- D. Leong, M. Harry, K.J. Reeson, and K.P. Homewood Nature 387 1997 686
- (1997) Nature , vol.387 , pp. 686
- Leong, D.¹ Harry, M.² Reeson, K.J.³ Homewood, K.P.⁴

2
- 0000451959
- J.E. Mahan, K.M. Geib, G.Y. Robinson, R.G. Lomg, Y. Xinghua, G. Bai, M.-A. Nicolet, and M. Nathan Appl. Phys. Lett. 56 1990 2126
- (1990) Appl. Phys. Lett. , vol.56 , pp. 2126
- Mahan, J.E.¹ Geib, K.M.² Robinson, G.Y.³ Lomg, R.G.⁴ Xinghua, Y.⁵ Bai, G.⁶ Nicolet, M.-A.⁷ Nathan, M.⁸

3
- 33646614515
- J. Chevrier, P. Stocker, L.T. Vinh, J.M. Gay, and J. Derrien Europhys. Lett. 22 1993 449
- (1993) Europhys. Lett. , vol.22 , pp. 449
- Chevrier, J.¹ Stocker, P.² Vinh, L.T.³ Gay, J.M.⁴ Derrien, J.⁵

4
- 0029345969
- H.-U. Nissen, E. Müller, H.R. Deller, and H. von Känel Phys. Stat. Sol. A 150 1995 395
- (1995) Phys. Stat. Sol. A , vol.150 , pp. 395
- Nissen, H.-U.¹ Müller, E.² Deller, H.R.³ Von Känel, H.⁴

5
- 3643130905
- D.J. Eaglemann, and M. Cerullo Phys. Rev. Lett. 64 1990 1943
- (1990) Phys. Rev. Lett. , vol.64 , pp. 1943
- Eaglemann, D.J.¹ Cerullo, M.²

6
- 3042776999
- T. Suemasu, and F. Hasegawa J. Jpn. Assoc. Crystal Growth 25 1998 46
- (1998) J. Jpn. Assoc. Crystal Growth , vol.25 , pp. 46
- Suemasu, T.¹ Hasegawa, F.²

7
- 3042788097
- K. Akiyama, T. Kimura, T. Suemasu, F. Hasegawa, Y. Maeda, and H. Funakubo Jpn. J. Appl. Phys. 43 2004 L551
- (2004) Jpn. J. Appl. Phys. , vol.43
- Akiyama, K.¹ Kimura, T.² Suemasu, T.³ Hasegawa, F.⁴ Maeda, Y.⁵ Funakubo, H.⁶

8
- 0033172251
- T. Suemasu, N. Hiroi, T. Fujii, K. Takakura, and F. Hasegawa Jpn. J. Appl. Phys. 38 1999 L878
- (1999) Jpn. J. Appl. Phys. , vol.38
- Suemasu, T.¹ Hiroi, N.² Fujii, T.³ Takakura, K.⁴ Hasegawa, F.⁵

9
- 4444257324
- T. Suemasu, M. Tatauji, C. Li, Y. Ozawa, M. Ichida, and F. Hasegawa Jpn. J. Appl. Phys. 43 2004 L930
- (2004) Jpn. J. Appl. Phys. , vol.43
- Suemasu, T.¹ Tatauji, M.² Li, C.³ Ozawa, Y.⁴ Ichida, M.⁵ Hasegawa, F.⁶

10
- 30344437962
- accepted
- K. Akiyama, S. Kaneko, Y. Hirabayashi, H. Funakubo, J. Crystal Growth, accepted.
- J. Crystal Growth
- Akiyama, K.¹ Kaneko, S.² Hirabayashi, Y.³ Funakubo, H.⁴

11
- 0031164248
- M. Tanaka, Y. Kumagai, T. Suemasu, and F. Hasegawa Jpn. J. Appl. Phys. 36 1997 3620
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 3620
- Tanaka, M.¹ Kumagai, Y.² Suemasu, T.³ Hasegawa, F.⁴

12
- 0031219815
- T. Suemasu, M. Tanaka, T. Fujii, S. Hashimoto, Y. Kumagai, and F. Hasegawa Jpn. J. Appl. Phys. 36 1997 L1225
- (1997) Jpn. J. Appl. Phys. , vol.36
- Suemasu, T.¹ Tanaka, M.² Fujii, T.³ Hashimoto, S.⁴ Kumagai, Y.⁵ Hasegawa, F.⁶

13
- 85083939566
- N. Hiroi, T. Suemasu, K. Takakura, N. Seki, and F. Hasegawa Jpn. J. Appl. Phys. 40 2001 L1008
- (2001) Jpn. J. Appl. Phys. , vol.40
- Hiroi, N.¹ Suemasu, T.² Takakura, K.³ Seki, N.⁴ Hasegawa, F.⁵

14
- 0024019638
- T. Nishinaga, T. Nakano, and S. Zhang Jpn. J. Appl. Phys. 27 1988 L964
- (1988) Jpn. J. Appl. Phys. , vol.27
- Nishinaga, T.¹ Nakano, T.² Zhang, S.³

15
- 0031348636
- A. Kimura, C. Sasaoka, A. Sakai, and A. Usui Mater. Res. Soc. Symp. Proc. 482 1998 119
- (1998) Mater. Res. Soc. Symp. Proc. , vol.482 , pp. 119
- Kimura, A.¹ Sasaoka, C.² Sakai, A.³ Usui, A.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.