SCOPUS 정보 검색 플랫폼

Volumn 287, Issue 2, 2006, Pages 582-585

Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode

Author keywords

A1. Photoluminescence; B2. III V semiconductors; B3. Electroluminescence; B3. Quantum wells

Indexed keywords

ELECTROLUMINESCENCE; ELECTRON ABSORPTION; ELECTRON TRANSITIONS; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; TEMPERATURE MEASUREMENT;

ELECTRON OVERFLOW; III-V SEMICONDUCTORS; INTERNAL ABSORPTION; MULTIPLE QUANTUM WELL (MQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 30344440830 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.141 Document Type: Conference Paper

Times cited : (13)

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