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Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 135-138
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SiC-DACFET
a
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Author keywords
Channel mobility; Delta doped accumulation channel MOSFET; Delta doping; On resistance; Pulse doping
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Indexed keywords
CHEMICAL REACTORS;
CHEMICAL VAPOR DEPOSITION;
DIFFUSION;
DOPING (ADDITIVES);
EPITAXIAL GROWTH;
FIELD EFFECT TRANSISTORS;
MOS DEVICES;
CHANNEL MOBILITY;
DELTA DOPED ACCUMULATION CHANNEL MOSFET;
DELTA-DOPING;
ON RESISTANCE;
PULSE-DOPING;
SILICON CARBIDE;
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EID: 30344434332
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2005.10.056 Document Type: Conference Paper |
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Times cited : (2)
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References (9)
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