Delta-doped layers of SiC grown by 'pulse doping' technique

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 247-250

  Takahashi, K ^a   Yokogawa, T ^a   Uchida, M ^a   Kusumoto, O ^a   Yamashita, K ^a   Miyanaga, R ^a   Kitabatake, M ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

C V profile; CVD; Delta doped structure; Epitaxial growth; Pulse doping technique; Vertical hot wall

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); EPILAYERS; EPITAXIAL GROWTH; SILICON CARBIDE; SEMICONDUCTOR DOPING;

DELTA-DOPED STRUCTURE; PULSE DOPING TECHNIQUE; VERTICAL HOT-WALL; CONTINUOUS-EPITAXIAL-GROWTH; DELTA-DOPED; DONOR CONCENTRATIONS; DOPING TECHNIQUES; LAYERED STRUCTURES; MASS FLOW CONTROLLER; STRATIFIED STRUCTURE; VERTICAL HOT WALL;

SEMICONDUCTOR DOPING; EPITAXIAL GROWTH;

EID: 23544476872     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.247     Document Type: Article

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