Surface morphology of SiC epitaxial layers grown by vertical hot-wall type CVD

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 243-246

  Takahashi, K ^a   Uchida, M ^a   Yokogawa, T ^a   Kusumoto, O ^a   Yamashita, K ^a   Miyanaga, R ^a   Kitabatake, M ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

CVD; Epitaxial growth; Hydrogen etching; Macrosteps; Surface morphology; Vertical hot wall

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ETCHING; HYDROGEN; MORPHOLOGY; SILICON CARBIDE; SURFACE MORPHOLOGY; SURFACE ROUGHNESS;

HIGH TEMPERATURE; HYDROGEN ANNEALING; HYDROGEN ETCHING; LOW PRESSURES; MACROSTEPS; OFF-ANGLE; STEP HEIGHT; VERTICAL HOT WALL;

EPITAXIAL GROWTH;

EID: 15244353754     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028hnnwscientific.net/MSF.389-393.243     Document Type: Conference Paper

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