Nitrogen Delta Doping in 4H-SiC Epilayers

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 153-156

  Henry, A ^a   Storasta, L ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

CVD; Delta Doping; Growth Rate

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

EPITAXIAL LAYERS;

NITROGEN;

EID: 0242581502     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.153     Document Type: Conference Paper

References (7)

1. T. Yokogawa, K. Takahashi, T. Uenoyama, O. Kusumoto, M. Uchida and M. Kitabatake, J.Appl Phys. 89 (2001), p. 1794
2. S. Karlsson, C. Adås, A. Konstantinov and M.K. Linnarsson, Mat. Sc. For. Vol. 353-356 (2001), p. 563
3. O. Kordina, C. Hallin, A. Henry, J. P. Bergman, I. Ivanov, A. Ellison, N. T. Son, and E. Janzén; Phys. Status Solidi B 202 (1997), p.321
4. EpigressAB
5. C. Hallin, F. Owman, P. Mårtensson, A. Ellison, A.O. Konstantinov, and E. Janzén; J. Cryst. Growth 181 (1997), p.241
6. A. Henry, A. Ellison, U. Forsberg, B. Magnusson, G. Pozina, and E. Janzén, Mat. Sc. For. Vol.389-393 (2002), p.593
7. M. Kushibe, Y. Ishida, H. Okumura, T. Takahashi, K. Masahara, T. Ohno, T. Suzuki, T. Tanaka, S. Yoshida, and K. Arai, Mat. Sc. For. Vol.338-342 (2000), p-169.