An analytical breakdown model of high voltage SOI device considering the modulation of step Buried-oxide Interface Charges

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 1, Issue , 2004, Pages 357-360

  Guo, Yufeng ^a   Li, Zhaoji ^a   Zhang, Bo ^a   Fang, Jian ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Breakdown voltage; Model; SOI; Step buried oxide interface charges

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PERMITTIVITY; POISSON DISTRIBUTION;

HIGH VOLTAGE; MODEL; SILICON-ON-INSULATOR (SOI); STEP BURIED-OXIDE INTERFACE CHARGES (SBIC);

SILICON ON INSULATOR TECHNOLOGY;

EID: 15944403907     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. W. Wondrak, R. Held, Semiconductor Component with Embedded Fixed Charges to Provide Increased High Breakdown Voltage, United states patent 5767548 (1998).
2. Z. J. Li, L. Y. Luo, Y. F. Guo, et al., Breakdown Theory of a New SOI Composite Structure, ICCCAS02, p. 1744(2002).
3. H. Kapels, R. Plikat D. Silber, Dielectric Charge Traps: A New Structure Element for Power Devices, Proceeding of ISPSD'00, p. 205(2000).
4. Sizt G., Goetzberger A., Control of Positive Surface Charge in Si-SiO2 Interface by Use of Implanted Cs Ions, Application Physics Letter, 19, p. 478(1971).
5. S. Merchant, Analytical Model for the Electric Field Distribution in SOI Resurf and TMBS Structures, IEEE Transaction on Electron Devices, 46(6), p. 1264(1999).
6. Yufeng Guo, Zhaoji Li, Bo Zhang, et. al., Breakdown Model & New Structure of SOI High Voltage Devices with Step Buried Oxide Fixed Charges, Accept by Chinese Journal of Semiconductors.