Breakdown theory of a new SOI composite structure

2002 International Conference on Communications, Circuits and Systems and West Sino Exposition, ICCCAS 2002 - Proceedings

Volumn 2, Issue , 2002, Pages 1744-1747

  Li, Zhaoji ^a   Luo, Luyang ^a   Guo, Yufeng ^a   Zhang, Bo ^a   Fang, Jian ^a   Zeng, Jun ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b Pyramis Corp   (United States)

Author keywords

breakdown; LIC; model; SOI; URF

Indexed keywords

CONVOLUTION; ELECTRIC INSULATORS; MODELS; POISSON EQUATION; RECONFIGURABLE HARDWARE; SEMICONDUCTOR JUNCTIONS; SILICON OXIDES; STRUCTURE (COMPOSITION);

ANALYTICAL RESULTS; BREAKDOWN; BREAKDOWN MODEL; CRITICAL ELECTRIC FIELD; INTERFACE CHARGE; LATERAL DIRECTIONS; POTENTIAL PROFILES; VERTICAL DIRECTION;

ELECTRIC FIELDS;

EID: 84976333454     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCCAS.2002.1179115     Document Type: Conference Paper

References (5)

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4. X. B. Chen, B. Zhang and Z. J. Li, "Theory of Optimum Design of Reverse-Biased p-n Junctions using Resisted Field plates and Variation Lateral Doping", Solid state Electronics, Vol.35 No. 9, pp. 1365, 1992.
5. Q.Y. Liu, Z. J. Li, B. Zhang and J. Fang, "The Research on Breakdown Voltage of High SOI LDMOS Devices With Shielding Trench", ICSICT2001, pp 159-161, 2001.