Types and origin of dislocations in large GaAs and InP bulk crystals with very low dislocation densities

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 15, 2005, Pages 2870-2879

  Muller G ^a   Schwesig, P ^a   Birkmann, B ^a   Hartwig J ^b   Eichler, S ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CRYSTALS; DISLOCATION DENSITY; RESIDUAL DISLOCATION; VERTICAL GRADIENT FREEZE (VGF) GROWTH; DISLOCATION DENSITIES; DISLOCATION FREE; GAAS; GROWTH TECHNIQUES; LOW-DISLOCATION DENSITY; RESIDUAL DISLOCATIONS; VERTICAL GRADIENT FREEZE;

COMPUTER SIMULATION; CRYSTAL GROWTH; DOPING (ADDITIVES); FREEZING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; GALLIUM ARSENIDE; OPTIMIZATION; SEMICONDUCTING GALLIUM;

DISLOCATIONS (CRYSTALS);

EID: 29844439744     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521179     Document Type: Article

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