Thermoelastic analysis of slip defect generation on GaAs wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5457-5464

  Sawada, Shin Ichi ^a   Yoshida, Hikari ^a   Kiyama, Makoto ^a   Nakai, Ryusuke ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Anisotropy; Dislocation; Finite element method; GaAs; Orientation flat; Slip defect; Slip system; Thermoelasticity; Wafer

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; THERMAL EFFECTS; THERMOELASTICITY;

SLIP DISLOCATIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032178972     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5457     Document Type: Article

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