Influence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique

Journal of Crystal Growth

Volumn 187, Issue 1, 1998, Pages 1-8

  Amon, J ^a   Dumke, F ^a   Muller G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Facet growth; GaAs; III V semiconductors; Melt growth; Twin formation

Indexed keywords

CORRELATION METHODS; CRUCIBLES; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TWINNING;

THREE PHASE BOUNDARY (TPB); VERTICAL GRADIENT FREEZING (VGF);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032473786     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00849-X     Document Type: Article

References (30)

1. W.A. Gault, E.M. Monberg, J.E. Clemans, J. Crystal Growth 74 (1986) 491.
2. R.E. Kremer, D. Francomano, G.H. Beckhart, K.M. Burke, T. Miller, Mater. Res. Soc. Symp. Proc 144 (1989) 15.
3. C.R. Abernathy, A.P. Kinsella, A.S. Jordan, R. Caruso, S.J. Pearton, H. Temkin, H. Wade, J. Crystal Growth 85 (1987) 106.
4. E.D. Bourret, J.B. Guitron, M.L. Galiano, E.E. Haller, J. Crystal Growth 102 (1990) 877.
5. W.A. Gault, J.E. Conway, F. Dominquez, T.I. Ejim, E.M. Monberg, F. Simchock, in: K. Sumino (Ed.), Defect Control in Semiconductors, Elsevier, Amsterdam, 1990, p. 653.
6. K. Hoshikawa, H. Nakanishi, H. Kohda, M. Sasaura, J. Crystal Growth 94 (1989) 643.
7. T.P. Chen, Y.D. Guo, T.S. Huang, L.J. Chen, J. Crystal Growth 103 (1990) 243.
8. H.J. Koh, M.H. Choi, I.S. Park, T. Fukuda, Cryst. Res. Technol. 30 (1995) 397.
9. W.A. Bonner, J. Crystal Growth 54 (1981) 21.
10. C. Frank, K. Hein, E. Buhrig, Cryst. Res. Technol. 29 (1994) 1, K12-K16.
11. P. Rudolph, F. Matsumoto, T. Fukuda, J. Crystal Growth 158 (1996) 43.
12. A. Steinemann, U. Zimmerli, Solid State Electron. 6 (1963) 597.
13. J.P. Tower, R. Tobin, P.J. Pearah, R.M. Ware, J. Crystal Growth 114 (1991) 665.
14. W.A. Bonner, Mater. Res. Bull. 15 (1980) 63.
15. K.J. Bachmann, E. Buehler, J.L. Shay, A.R. Strnad, J. Electron. Mater. 4 (1975) 63.
16. D.T.J. Hurle, J. Crystal Growth 147 (1995) 239.
17. K. Hashio, S. Sawada, M. Tatsumi, K. Fujita, S. Akai, J. Crystal Growth 173 (1997) 33.
18. R. Fornari, L. Zanotti, G. Zucalli, Mater. Chem. Phys. 9 (1983) 307.
19. F. Matsumoto, Y. Okano, I. Yonenaga, K. Hoshikawa, T. Fukuda, J. Crystal Growth 132 (1993) 348.
20. D. Zemke, H.J. Leister, G. Müller, Proc. 8th Int. Conf. on InP and Related Materials, Schwäbisch Gmünd, Germany, IEEE, New York, 1996, p. 47.
21. J. Amon, D. Zemke, B. Hofmann, G. Müller, J. Crystal Growth 166 (1996) 646.
22. H. Weimann, J. Amon, T. Jung, G. Müller, J. Crystal Growth 180 (1997) 560.
23. E.D. Bourret, A.C.E. Merk, J. Crystal Growth 110 (1991) 395.
24. J.B. Mullin, A. Royle, S. Benn, J. Crystal Growth 50 (1980) 625.
25. B. Cockayne, W.R. MacEwan, D.A.O. Hope, I.R. Harris, N.A. Smith, J. Crystal Growth 87 (1988) 6.
26. J. Weyher, J. van der Yen, J. Crystal Growth 63 (1983) 285.
27. K. Sonnenberg, A. Altmann, Forschungszentrum Jülich, Jül-2939, 1994.
28. D.T.J. Hurle, in: R.G. Chambers, J.E. Enderby, A. Keller, A.R. Lang, J.W. Steedsand (Eds.), Sir Charles Frank, OBE, FRS: An Eightieth Birthday Tribute, Adam Hilger, Bristol, 1991, p. 188.
29. V.V. Voronkov, Sov. Phys. Crystallogr. 19 (1975) 573.
30. H.C. Gatos, M.C. Lavine, J. Electrochem. Soc. 107 (1960) 427.