Vapour pressure controlled Czochralski (VCZ) growth - A method to produce electronic materials with low dislocation density

Crystal Research and Technology

Volumn 32, Issue 1, 1997, Pages 35-50

  Rudolph, P ^a   Neubert, M ^a   Arulkumaran, S ^a,b   Seifert, M ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b ANNA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; PRESSURE CONTROL; PRESSURE EFFECTS; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SINGLE CRYSTALS; THERMAL GRADIENTS; VAPOR PRESSURE;

ELECTRONIC COMPOUND SINGLE CRYSTALS; VAPOR PRESSURE CONTROLLED CZOCHRALSKI (VCZ) METHOD;

CRYSTAL GROWTH FROM MELT;

EID: 0030677535     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.2170320104     Document Type: Article

References (75)

1. AZUMA, K.: Japanese patent 60-11299 (1983)
2. BECK, A., MOOSER, E.: Helv. Phys. acta. 34 (1961) 370
3. BELJACKAJA, N. S., GRISHINA, S. P.: Izv. ANSSSR, Neorg. Mater. 3 (1967) 1347
4. BOROVLEV, U. A., VASILIEV, YA. V., PAVLYUK, A. A., SHLEGEL, V. N.: ICCG XI, The Eleventh Int. Conf. on Cryst. Growth, The Haque (The Netherlands, 1995) 162
5. BOOMGARD, J. VAN DEN, SCHOL, K.: Philips Res. Rep. 12 (1957) 127
6. CHEN, R. T., HOLMES, D. E.: J. Cryst. Growth 61 (1983) 111
7. CLARK, S., BROZEL, M. R., STIRLAND, D. J., HURLE, D. T. J., GRANT, I.: Defect Control in Semiconductors, K. Sumino (ed. ) Elsevier (North-Holland, 1990) 807
8. EJIM, T. I., SIMCHOCK, F., MONBERG, E. M.: Proc. 1st Int. Conf. on InP and Related Materials, Oklahoma (1989) 137
9. ELLIOT, A. G., FLAT, A., VANDERWATER, D. A.: J. Cryst. Growth 121 (1992) 349
10. FARGES, J. P., SCHILLER, C., BARTELS, W. J.: J. Cryst. Growth 83 (1987) 159
11. FOLBERTH, O. G., WEISS, H.: Z. Naturforsch. 10a (1955) 615
12. FORNARI, R., PIORICI, C., ZANOTTI, L., ZUCCALLI, G.: J. Cryst. Growth 63 (1983) 415
13. FUJII, T., NAKAJIMA, M., FUKUDA, T.: J. Cryst. Growth 87 (1988) 547
14. GAULT, W. A., MONBERG, E. M., CLEMANS, J. E.: J. Cryst. Growth 74 (1986) 491
15. GAULT, W. A., CLEMANS, J. E., CONWAY, J. H., DOMINQUEZ, F., EJIM, T. I., MONBERG, M., SIMCHOCK, F.: Defect Control in Semiconductors, K. Sumino (ed.), Elsevier (North Holland, 1990) 653
16. GREMMELMAIER, R.: Z. Naturforech. 11a (1956) 511
17. HIRANO, R.: III-Vs Review (Elsevier) 4, 2B (1991) 20
18. HOLMES, D. E., KUWAMOTO, C., SANDBERG, C. J., JOHNSON, S. L.: J. Cryst. Growth 91 (1988) 557
19. INDENBOM, V. L.: Kristall u. Technik 14 (1979) 493
20. ISELER, G. W.: J. Cryst. Growth 54 (1981) 16
21. JACOB, G., DUSEAUX, M., FARGES, J. P., VARDEN BOOM, M. M. B., ROKSNOER, P. J.: J. Cryst. Growth 61 (1983) 417
22. JORDAN, A. S., CARUSO, R., NEIDA, A. R. V.: Bell Sys. Tech. J. 59 (1980) 593
23. KAWARABAYASHI, S., YOKOGAWA, M., KAWASAKI, A., NAKAI, R.: Proc. Sixth Int. Conf. on InP and Related Materials, Santa Barbara, (1994) 227
24. KAWASE, T.: Japanease patent 3-257092 (1990)
25. KAWASE, T., WAKAMIYA, T., FUJIWARA, S., HASHIO, K., KIMURA, K., TATSUMI, M., SHIRAKAWA, T., TADA, K.:7th Conf. on Semi-insulating Materials, Ixtapa (1992) 85
26. KAWASE, T., HAGI, Y., TATSUMI M., FUJITA, K., NAKAI, R.: Proc. of 9th Conf. on Semiconducting and Insulating Materials, Toulouse (1996) (to be published)
27. KIRKPATRICK, C. G., CHEN, R. T., HOLMES, D. E., ASBECK, P. M., ELLIOT, K. R., FAIRMAN. R. D., OLIVER, J. R.: Semiconductors and semimetals, eds. R. K. Willardson and A. C. Beer. Vol. 20 (Academic press, New York 1984) 159
28. KOHIRO, K., KAINOSHO, K., ODA, O.: J. Electron. Mater. 20 (1991) 1013
29. KOHIRO, K., OHTA, M., ODA, O.: J. Cryst. Growth 158 (1996) 197
30. KONO, J.: Japanese patent 5-32488 (1991)
31. KULAKOV, M. P., FADEEV, A. V.: Izv. AN SSSR, Neorg. Mat. 17 (1981) 1565 (translated issue)
32. LAISTER, D., JENKINS, G. M.: J. Mater. Sci. 8 (1973) 1218
33. MATSUMOTO, F., OKANO, Y., YONENAGA, I., HOSHIKAWA, K., FUKUDA, T.: J. Cryst. Growth 132 (1993) 438
34. MATSUMURA, A. T.: Japanese patent 63-265897 (1987)
35. MEYER, M.: Compound Semiconductor 2, 1 (1996) 32
36. MONBERG, E. M., BROWN, H., BONNER, C. E.: J. Crys. Growth 94 (1989) 109
37. MONBERG, E. M., BROWN, H., CHU, S. N. G., PARSEY, J. M.: Proc. 5th Conf. on Semi-Insulating III-V Materials, Malmo (1988) 459
38. MORI, M.: Japanese patent : 1-242489 (1988)
39. MULLER, G., HOFMANN, D., SCHAFER, N.: Proc. of the 5th Int. Conf. on InP and Related Materials, Paris (1993) 60
40. NAKANISHI, H., KOHDA, H., YAMADA, K., HOSHIKAWA, K.: Extended Abstract of 16th Conf. on Solid-State Devices and Materials, Kobe (1984) 63
41. NEUBERT, M., SEIFERT, M., RUDOLPH, P., TROMPA, K., PIETSCH, M.: Proc. of 9th Conf. on Semiconducting and Insulating Materials, Toulouse (1996) (to be published)
42. ODA, O.: Japanese patent 62-113795 (1987)
43. OTOKI, Y., SAHARA, M., SHIBATA, M., KUMA, S., KASHIWA, M.: Mater. Science Forum 196 (1995) 1431
44. OZAWA, S., MIYAIRI, H., NAKAJIMA, M., FUKUDA, T.: Inst. Phys. Conf. Ser. No. 79, Chapter 1 (1986) 25
45. PARSEY, J. M., NANISHI, Y., LAGOWSKI, J., GATOS, H. C.: J. Electrochem. Soc.: Solid-State Science and Technology 128 (1981) 936
46. PARSEY, J. M., NANISHI, Y., LAGOWSKI, J., GATOS, H. C.: J. Electrochem. Soc.: Solid-State Science and Technology 129 (1982) 388
47. PEARTON, S. J., REN, F., CHU, S. N. G., HOBSON, W. S., ABERNATHY, C. R., FULLOWAN, T. R., LOTHIAN, J. R., ELLIMAN, R. G., JACOBSON, D. C., POATE, J. M.: Nucl. Instr. and Methods B79 (1993) 648
48. PFEIFER, E.: Ph.D thesis, Humboldt-University of Berlin 1990 (see also: PFEIFER, E., RUDOLPH, P. patent description DD 290226 AS, 1989)
49. RAO, M. V.: Nucl. Instr. and Methods B79 (1993) 645
50. ROCKSNOER, P. J., RIJBROAEK-VAN DEN BOOM, M. M. B.: J. Cryst. Growth 66 (1984) 317
51. RUDOLPH, P., KIESLING, F. M.: Cryst. Res. Technol. 23 (1988) 1207
52. SASA, K.: Japanese patents 6-16492 and 6-16493 (1992)
53. SASAKI, Y.: Japanese patent 61-201691 (1985)
54. SATO, F.: Japanese patent 63-285191 (1987)
55. SAWADA, S.: Japanese patent 3-50188 (1989)
56. SAWADA, S., OIDA, K., MIYAJIMA, H., NAMBU, K., NAKAI, R., TATSUMI, M., FUJITA, K., NISHIDA, Y.: Proc. of IEEE GaAs IC Symposium, San Diego (1995) 115
57. SCHLOSSMACHER, P.: Electronenmikroskopische Untersuchungen von Gitterbaufehlern in GaAs, Berichte des Forschungszentrums Jülich; 2430 (1991) (see also Ph.D thesis D 82 Diss. T.H. Aachen)
58. SEIFERT, M., NEUBERT, M., ULRICI, W., WIEDEMANN, B., DONECKER, J., KLUGE, J., WOLF, E., KLINGER, D., RUDOLPH, P.: J. Cryst. Growth 158 (1996) 409
59. SEKI, Y., WATENABE, M., MATSUI, J.: J. Appl. Phys. 42 (1978) 822
60. SHIMIZU, A., NISHINE, S., MORIOKA, M., FUJITA, K., AKAI, S.: Semi-Insulating III-V Materials, Ohmsha, (1986) 41
61. SHIRATA, T.: Japanese patent 3-285887 (1990)
62. SHIMADA, T.: Japanese patent 62-217000 (1986)
63. STEINEMANN, A. and ZIMMERLI, U.: "Crystal Growth", ed. by H. S. PEISER, Pergamon (Oxford 1967) 81
64. TADA, K., TATSUMI, M.: Japanese patent 60-264390 (1984); US patent 5256381 (1993)
65. TATSUMI, M., KAWASE, T., ARAKI, T., YAMABAYASHI, N., IWASAKI, T., NIURA, Y., MURAI, S., TADA, K., AKAI, S.: SPIE Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices 1144 (1989) 18
66. TATSUMI, M., KAWASE, T., IGUCHI, Y., FUJITA, K., YAMADA, M.: Proc. of 8th Conf. on Semi-insulating III-V Materials, Warsaw (1994) 11
67. THOMAS, R. N., HOBGOOD, H .M., RAVISHANKAR, P. S., BRAGGINS, T. T.: Solid State Technol., 33 (1990) 121
68. TOMIZAWA, K., SASSA, K., SHIMANUKI, Y., NIZHIZAWA, J.: J. Electrochem. Soc.: Solid-State and Technology 131 (1984) 2294
69. TOMIZAWA, K., SASSA, K., SHIMANUKI, Y., NIZHISAWA, J. in: Defects and Properties of Semiconductors: Defect Engineering, edited by Chikawa J., Sumino K., Wada K. (KTK publishers, Tokyo 1987) 25
70. TOMIZAWA, K., SASSA, K., SHIMANUKI, Y., NISHIZAWA, J.: Inst. of Phys. Conf. Ser. No. 91, IOP publishing, Chapter 5 (1988) 435
71. TOWER, J. P., TOBIN, R., PEARCH, P. J., WARE, R. M.: J. Cryst. Growth 114 (1991) 665
72. USUDA, K., FUJII, T.: J. Cryst. Growth 151 (1995) 13
73. VÖLKL, J., MÜLLER, G., BLUM, W.: J. Cryst. Growth, 83 (1987) 383
74. WATANABE, H.: Japanese patent 61-209989 (1985)
75. WENZL, H., OATES, W. A., MIKA, K.: Handbook of Crystal Growth, Vol. 1a (Elsevier 1993) 103