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Volumn 275, Issue 1-2, 2005, Pages

Biaxial strain effect in exciton resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates

Author keywords

A1. Biaxial stress; A1. Critical thickness; B1. Free excitons; B1. Oxide semiconductors

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; EXCITONS; GALLIUM NITRIDE; HETEROJUNCTIONS; RESONANCE; SEMICONDUCTOR MATERIALS; STRESSES;

BIAXIAL STRESSES; CRITICAL THICKNESS; FREE EXCITONS; OXIDE SEMICONDUCTORS;

ZINC COMPOUNDS;

EID: 15844400846 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.356 Document Type: Conference Paper

Times cited : (10)

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