N vacancy diffusion and trapping in Mg-doped wurtzite GaN

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2015-2022

  Wright, A F ^a   Mattsson, T R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATES; DIFFUSION PATHS; VACANCY DIFFUSION; VIENNA AB INITIO SIMULATION PACKAGE (VASP);

ACTIVATION ENERGY; ANNEALING; BINDING ENERGY; COMPUTER SIMULATION; DIFFUSION; DISSOCIATION; DOPING (ADDITIVES); LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POSITRON ANNIHILATION SPECTROSCOPY; PROBABILITY DENSITY FUNCTION;

GALLIUM NITRIDE;

EID: 4344662533     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767981     Document Type: Article

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40. 0. This result is not comparable to the values reported in Table III.
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